Native Oxide Formation on Silicon Wafer.
نویسندگان
چکیده
منابع مشابه
Hydrophobic silicon wafer bonding
Wafers prepared by an HF dip without a subsequent water rinse were bonded at room temperature and annealed at temperatures up to 1100 “C. Based on substantial differences between bonded hydrophilic and hydrophobic Si wafer pairs in the changes of the interface energy with respect to temperature, secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM), we suggest that h...
متن کاملNovel Iron-oxide Catalyzed CNT Formation on Semiconductor Silicon Nanowire
An aqueous ferric nitrate nonahydrate (Fe(NO3)3.9H2O) and magnesium oxide (MgO) were mixed and deposited on silicon nanowires (SiNWs), the carbon nanotubes (CNTs) formed by the concentration of Fe3O4/MgO catalysts with the mole ratio set at 0.15:9.85 and 600°C had diameter between 15.23 to 90nm with high-density distribution of CNT while those with the mole ratio set at 0.45:9.55 and 730°C had ...
متن کاملLecture 21: Silicon wafer manufacturing
The first step in integrated circuit (IC) fabrication is preparing the high purity single crystal Si wafer. This is the starting input to the fab. Typically, Si wafer refers to a single crystal of Si with a specific orientation, dopant type, and resistivity (determined by dopant concentration). Typically, Si (100) or Si (111) wafers are used. The numbers (100) and (111) refers to the orientatio...
متن کاملWafer-to-Wafer Bonding for Microstructure Formation
Wafer-to-wafer bonding processes for microstructure fabrication are categorized and described. These processes have an impact in packaging and structure design. Processes are categorized into direct bonds, anodic bonds, and bonds with intermediate layers. Representative devices using wafer-to-wafer bonding are presented. Processes and methods for characterization of a range of bonding methods a...
متن کاملEffects of oxide formation around core circumference of silicon-on-oxidized-porous-silicon strip waveguides.
We have studied the effect of oxidation on the propagation loss and surface roughness of silicon-on-oxidized-porous-silicon strip waveguides fabricated using proton-beam irradiation and electrochemical etching. A thin thermal oxide is formed around the core of the waveguide, enabling the symmetric reduction of core size and roughness on all sides. Significant loss reduction from about 10 dB/cm ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Nihon Kessho Gakkaishi
سال: 1991
ISSN: 0369-4585,1884-5576
DOI: 10.5940/jcrsj.33.182